SQJ963EP-T1_GE3
SQJ963EP-T1_GE3
Número de pieza:
SQJ963EP-T1_GE3
Fabricante:
Electro-Films (EFI) / Vishay
Descripción:
MOSFET 2 P-CH 60V POWERPAK SO8
Estado Libre de plomo / Estado RoHS:
Sin plomo / Cumple con RoHS
Cantidad disponible:
12778 Pieces
El tiempo de entrega:
1-2 days
Ficha de datos:
SQJ963EP-T1_GE3.pdf

Introducción

We can supply SQJ963EP-T1_GE3, use the request quote form to request SQJ963EP-T1_GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SQJ963EP-T1_GE3.The price and lead time for SQJ963EP-T1_GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SQJ963EP-T1_GE3.We look forward to working with you to establish long-term relations of cooperation

Especificaciones

Condición New & Unused, Original Packing
Origen Contact us
VGS (th) (Max) @Id:2.5V @ 250µA
Paquete del dispositivo:PowerPAK® SO-8 Dual
Serie:Automotive, AEC-Q101, TrenchFET®
RDS (Max) @Id, Vgs:85 mOhm @ 3.5A, 10V
Potencia - Max:27W (Tc)
embalaje:Cut Tape (CT)
Paquete / Cubierta:PowerPAK® SO-8 Dual
Otros nombres:SQJ963EP-T1_GE3CT
Temperatura de funcionamiento:-55°C ~ 175°C (TA)
Tipo de montaje:Surface Mount
Nivel de sensibilidad a la humedad (MSL):1 (Unlimited)
Estado sin plomo / Estado RoHS:Lead free / RoHS Compliant
Capacitancia de Entrada (Ciss) (Max) @ Vds:1140pF @ 30V
Carga de puerta (Qg) (máx.) @ Vgs:40nC @ 10V
Tipo FET:2 P-Channel (Dual)
Característica de FET:Standard
Voltaje drenaje-fuente (VDS) Las:60V
Descripción detallada:Mosfet Array 2 P-Channel (Dual) 60V 8A (Tc) 27W (Tc) Surface Mount PowerPAK® SO-8 Dual
Corriente - Drenaje Continuo (Id) @ 25 ° C:8A (Tc)
Email:[email protected]

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