SQJ910AEP-T1_GE3
SQJ910AEP-T1_GE3
Artikelnummer:
SQJ910AEP-T1_GE3
Hersteller:
Electro-Films (EFI) / Vishay
Beschreibung:
MOSFET 2 N-CH 30V POWERPAK SO8
verfügbare Anzahl:
26086 Pieces
Lieferzeit:
1-2 days
Datenblatt:
SQJ910AEP-T1_GE3.pdf

Einführung

We can supply SQJ910AEP-T1_GE3, use the request quote form to request SQJ910AEP-T1_GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SQJ910AEP-T1_GE3.The price and lead time for SQJ910AEP-T1_GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SQJ910AEP-T1_GE3.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2.5V @ 250µA
Supplier Device-Gehäuse:PowerPAK® SO-8 Dual
Serie:Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:7 mOhm @ 12A, 10V
Leistung - max:48W
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:PowerPAK® SO-8 Dual
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Surface Mount
Eingabekapazität (Ciss) (Max) @ Vds:1869pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:39nC @ 10V
Typ FET:2 N-Channel (Dual)
FET-Merkmal:Standard
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) 30V 30A (Tc) 48W Surface Mount PowerPAK® SO-8 Dual
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:30A (Tc)
Email:[email protected]

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