TPH2R506PL,L1Q
TPH2R506PL,L1Q
Artikelnummer:
TPH2R506PL,L1Q
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
X35 PB-F POWER MOSFET TRANSISTOR
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
30788 Pieces
Lieferzeit:
1-2 days
Datenblatt:
TPH2R506PL,L1Q.pdf

Einführung

We can supply TPH2R506PL,L1Q, use the request quote form to request TPH2R506PL,L1Q pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TPH2R506PL,L1Q.The price and lead time for TPH2R506PL,L1Q depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TPH2R506PL,L1Q.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2.5V @ 500µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:8-SOP Advance (5x5)
Serie:U-MOSIX-H
Rds On (Max) @ Id, Vgs:4.4 mOhm @ 30A, 4.5V
Verlustleistung (max):132W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-PowerVDFN
Andere Namen:TPH2R506PL,L1Q(M
TPH2R506PLL1Q
TPH2R506PLL1QTR
Betriebstemperatur:175°C (TJ)
Befestigungsart:Surface Mount
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:5435pF @ 30V
Gate Charge (Qg) (Max) @ Vgs:60nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4.5V, 10V
Drain-Source-Spannung (Vdss):60V
detaillierte Beschreibung:N-Channel 60V 100A (Tc) 132W (Tc) Surface Mount 8-SOP Advance (5x5)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:100A (Tc)
Email:[email protected]

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