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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > TPH3206LDGB
TPH3206LDGB
TPH3206LDGB
Artikelnummer:
TPH3206LDGB
Hersteller:
Transphorm
Beschreibung:
MOSFET N-CH 650V 16A PQFN
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
17965 Pieces
Lieferzeit:
1-2 days
Datenblatt:
TPH3206LDGB.pdf
Anfrage

Einführung

We can supply TPH3206LDGB, use the request quote form to request TPH3206LDGB pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TPH3206LDGB.The price and lead time for TPH3206LDGB depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TPH3206LDGB.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2.6V @ 500µA
Vgs (Max):±18V
Technologie:GaNFET (Gallium Nitride)
Supplier Device-Gehäuse:PQFN (8x8)
Serie:-
Rds On (Max) @ Id, Vgs:180 mOhm @ 11A, 8V
Verlustleistung (max):81W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:3-PowerDFN
Andere Namen:TPH3206LDG
TPH3206LDG-ND
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):3 (168 Hours)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:760pF @ 480V
Gate Charge (Qg) (Max) @ Vgs:9.3nC @ 4.5V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):8V
Drain-Source-Spannung (Vdss):650V
detaillierte Beschreibung:N-Channel 650V 16A (Tc) 81W (Tc) Surface Mount PQFN (8x8)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:16A (Tc)
Email:[email protected]

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