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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > TPH3207WS
TPH3207WS
TPH3207WS
Artikelnummer:
TPH3207WS
Hersteller:
Transphorm
Beschreibung:
MOSFET N-CH 650V 50A TO247
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
61051 Pieces
Lieferzeit:
1-2 days
Datenblatt:
TPH3207WS.pdf
Anfrage

Einführung

We can supply TPH3207WS, use the request quote form to request TPH3207WS pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TPH3207WS.The price and lead time for TPH3207WS depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TPH3207WS.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2.65V @ 700µA
Vgs (Max):±18V
Technologie:GaNFET (Gallium Nitride)
Supplier Device-Gehäuse:TO-247
Serie:-
Rds On (Max) @ Id, Vgs:41 mOhm @ 32A, 8V
Verlustleistung (max):178W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-247-3
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:2197pF @ 400V
Gate Charge (Qg) (Max) @ Vgs:42nC @ 8V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):8V
Drain-Source-Spannung (Vdss):650V
detaillierte Beschreibung:N-Channel 650V 50A (Tc) 178W (Tc) Through Hole TO-247
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:50A (Tc)
Email:[email protected]

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