SSM6J507NU,LF
SSM6J507NU,LF
Artikelnummer:
SSM6J507NU,LF
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
MOSFET P-CH 30V 10A 6UDFN
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
22002 Pieces
Lieferzeit:
1-2 days
Datenblatt:
SSM6J507NU,LF.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2.2V @ 250µA
Vgs (Max):+20V, -25V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:6-UDFNB (2x2)
Serie:U-MOSVI
Rds On (Max) @ Id, Vgs:20 mOhm @ 4A, 10V
Verlustleistung (max):1.25W (Ta)
Verpackung:Original-Reel®
Verpackung / Gehäuse:6-WDFN Exposed Pad
Andere Namen:SSM6J507NULFDKR
Betriebstemperatur:150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1150pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:20.4nC @ 4.5V
Typ FET:P-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4V, 10V
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:P-Channel 30V 10A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:10A (Ta)
Email:[email protected]

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