RN1110MFV,L3F
RN1110MFV,L3F
Artikelnummer:
RN1110MFV,L3F
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
TRANS PREBIAS NPN 0.15W VESM
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
41742 Pieces
Lieferzeit:
1-2 days
Datenblatt:
RN1110MFV,L3F.pdf

Einführung

We can supply RN1110MFV,L3F, use the request quote form to request RN1110MFV,L3F pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RN1110MFV,L3F.The price and lead time for RN1110MFV,L3F depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RN1110MFV,L3F.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Spannung - Kollektor-Emitter-Durchbruch (max):50V
VCE Sättigung (Max) @ Ib, Ic:300mV @ 500µA, 5mA
Transistor-Typ:NPN - Pre-Biased
Supplier Device-Gehäuse:VESM
Serie:-
Widerstand - Basis (R1):4.7 kOhms
Leistung - max:150mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:SOT-723
Andere Namen:RN1110MFV(TL3,T)
RN1110MFV(TL3T)TR
RN1110MFV(TL3T)TR-ND
RN1110MFV,L3F(B
RN1110MFV,L3F(T
RN1110MFVL3F
RN1110MFVL3F-ND
RN1110MFVL3FTR
RN1110MFVTL3T
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:16 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
detaillierte Beschreibung:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM
DC Stromgewinn (HFE) (Min) @ Ic, VCE:120 @ 1mA, 5V
Strom - Collector Cutoff (Max):100nA (ICBO)
Strom - Kollektor (Ic) (max):100mA
Email:[email protected]

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