QJD1210010
Artikelnummer:
QJD1210010
Hersteller:
Powerex, Inc.
Beschreibung:
MOSFET 2N-CH 1200V 100A SIC
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
78420 Pieces
Lieferzeit:
1-2 days
Datenblatt:
1.QJD1210010.pdf2.QJD1210010.pdf

Einführung

We can supply QJD1210010, use the request quote form to request QJD1210010 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number QJD1210010.The price and lead time for QJD1210010 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# QJD1210010.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:5V @ 10mA
Supplier Device-Gehäuse:Module
Serie:-
Rds On (Max) @ Id, Vgs:25 mOhm @ 100A, 20V
Leistung - max:1080W
Verpackung:Bulk
Verpackung / Gehäuse:Module
Betriebstemperatur:-40°C ~ 175°C (TJ)
Befestigungsart:Chassis Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:10200pF @ 800V
Gate Charge (Qg) (Max) @ Vgs:500nC @ 20V
Typ FET:2 N-Channel (Dual)
FET-Merkmal:Silicon Carbide (SiC)
Drain-Source-Spannung (Vdss):1200V (1.2kV)
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) 1200V (1.2kV) 100A (Tc) 1080W Chassis Mount Module
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:100A (Tc)
Email:[email protected]

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