FDME1023PZT
FDME1023PZT
Artikelnummer:
FDME1023PZT
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET 2P-CH 20V 2.6A 6-MICROFET
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
20341 Pieces
Lieferzeit:
1-2 days
Datenblatt:
FDME1023PZT.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1V @ 250µA
Supplier Device-Gehäuse:6-MicroFET (1.6x1.6)
Serie:PowerTrench®
Rds On (Max) @ Id, Vgs:142 mOhm @ 2.3A, 4.5V
Leistung - max:600mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:6-UFDFN Exposed Pad
Andere Namen:FDME1023PZT-ND
FDME1023PZTTR
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:39 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:405pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:7.7nC @ 4.5V
Typ FET:2 P-Channel (Dual)
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:Mosfet Array 2 P-Channel (Dual) 20V 2.6A 600mW Surface Mount 6-MicroFET (1.6x1.6)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:2.6A
Email:[email protected]

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