FDME910PZT
FDME910PZT
Artikelnummer:
FDME910PZT
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET P CH 20V 8A MICROFET
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
26709 Pieces
Lieferzeit:
1-2 days
Datenblatt:
FDME910PZT.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1.5V @ 250µA
Vgs (Max):±8V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:MicroFet 1.6x1.6 Thin
Serie:PowerTrench®
Rds On (Max) @ Id, Vgs:24 mOhm @ 8A, 4.5V
Verlustleistung (max):2.1W (Ta)
Verpackung:Cut Tape (CT)
Verpackung / Gehäuse:6-PowerUFDFN
Andere Namen:FDME910PZTCT
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:39 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:2110pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:21nC @ 4.5V
Typ FET:P-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):1.8V, 4.5V
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:P-Channel 20V 8A (Ta) 2.1W (Ta) Surface Mount MicroFet 1.6x1.6 Thin
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:8A (Ta)
Email:[email protected]

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