DTD113ECHZGT116
DTD113ECHZGT116
Artikelnummer:
DTD113ECHZGT116
Hersteller:
LAPIS Semiconductor
Beschreibung:
500MA/50V DIGITAL TRANSISTOR (WI
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
78329 Pieces
Lieferzeit:
1-2 days
Datenblatt:
1.DTD113ECHZGT116.pdf2.DTD113ECHZGT116.pdf

Einführung

We can supply DTD113ECHZGT116, use the request quote form to request DTD113ECHZGT116 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number DTD113ECHZGT116.The price and lead time for DTD113ECHZGT116 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# DTD113ECHZGT116.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VCE Sättigung (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
Transistor-Typ:NPN - Pre-Biased + Diode
Supplier Device-Gehäuse:SST3
Serie:Automotive, AEC-Q101
Widerstand - Emitterbasis (R2):1 kOhms
Widerstand - Basis (R1):1 kOhms
Leistung - max:200mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:TO-236-3, SC-59, SOT-23-3
Andere Namen:DTD113ECHZGT116TR
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:7 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz - Übergang:200MHz
detaillierte Beschreibung:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased + Diode 500mA 200MHz 200mW Surface Mount SST3
DC Stromgewinn (HFE) (Min) @ Ic, VCE:33 @ 50mA, 5V
Strom - Collector Cutoff (Max):-
Strom - Kollektor (Ic) (max):500mA
Email:[email protected]

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