CSD87312Q3E
Artikelnummer:
CSD87312Q3E
Hersteller:
TI
Beschreibung:
MOSFET 2N-CH 30V 27A 8VSON
Bleifreier Status / RoHS Status:
Enthält Blei / RoHS-konform
verfügbare Anzahl:
7401 Pieces
Lieferzeit:
1-2 days
Datenblatt:
CSD87312Q3E.pdf

Einführung

We can supply CSD87312Q3E, use the request quote form to request CSD87312Q3E pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number CSD87312Q3E.The price and lead time for CSD87312Q3E depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# CSD87312Q3E.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1.3V @ 250µA
Supplier Device-Gehäuse:8-VSON (3.3x3.3)
Serie:NexFET™
Rds On (Max) @ Id, Vgs:33 mOhm @ 7A , 8V
Leistung - max:2.5W
Verpackung:Cut Tape (CT)
Verpackung / Gehäuse:8-PowerTDFN
Andere Namen:296-35526-1
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:35 Weeks
Bleifreier Status / RoHS-Status:Contains lead / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1250pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:8.2nC @ 4.5V
Typ FET:2 N-Channel (Dual) Common Source
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) Common Source 30V 27A 2.5W Surface Mount 8-VSON (3.3x3.3)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:27A
Basisteilenummer:CSD87312
Email:[email protected]

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