CSD86336Q3DT
Artikelnummer:
CSD86336Q3DT
Hersteller:
TI
Beschreibung:
SYNCHRONOUS BUCK NEXFET POWER BL
verfügbare Anzahl:
44934 Pieces
Lieferzeit:
1-2 days
Datenblatt:
CSD86336Q3DT.pdf

Einführung

We can supply CSD86336Q3DT, use the request quote form to request CSD86336Q3DT pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number CSD86336Q3DT.The price and lead time for CSD86336Q3DT depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# CSD86336Q3DT.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1.9V @ 250µA, 1.6V @ 250µA
Supplier Device-Gehäuse:8-VSON (3.3x3.3)
Serie:NexFET™
Rds On (Max) @ Id, Vgs:9.1 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V
Leistung - max:6W
Verpackung:Original-Reel®
Verpackung / Gehäuse:8-PowerTDFN
Andere Namen:296-49054-6
Betriebstemperatur:-55°C ~ 125°C
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:35 Weeks
Eingabekapazität (Ciss) (Max) @ Vds:494pF @ 12.5V, 970pF @ 12.5V
Gate Charge (Qg) (Max) @ Vgs:3.8nC @ 45V, 7.4nC @ 45V
Typ FET:2 N-Channel (Half Bridge)
FET-Merkmal:Logic Level Gate, 5V Drive
Drain-Source-Spannung (Vdss):25V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Half Bridge) 25V 20A (Ta) 6W Surface Mount 8-VSON (3.3x3.3)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:20A (Ta)
Email:[email protected]

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