CSD86356Q5D
Artikelnummer:
CSD86356Q5D
Hersteller:
TI
Beschreibung:
25V POWERBLOCK N CH MOSFET
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
68663 Pieces
Lieferzeit:
1-2 days
Datenblatt:
CSD86356Q5D.pdf

Einführung

We can supply CSD86356Q5D, use the request quote form to request CSD86356Q5D pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number CSD86356Q5D.The price and lead time for CSD86356Q5D depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# CSD86356Q5D.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1.85V @ 250µA, 1.5V @ 250µA
Supplier Device-Gehäuse:8-VSON-CLIP (5x6)
Serie:NexFET™
Rds On (Max) @ Id, Vgs:4.5 mOhm @ 20A, 5V, 0.8 mOhm @ 20A, 5V
Leistung - max:12W (Ta)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-PowerTDFN
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:35 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1.04nF @ 12.5V, 2.51nF @ 12.5V
Gate Charge (Qg) (Max) @ Vgs:7.9nC @ 4.5V, 19.3nC @ 4.5V
Typ FET:2 N-Channel (Half Bridge)
FET-Merkmal:Logic Level Gate, 5V Drive
Drain-Source-Spannung (Vdss):25V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Half Bridge) 25V 40A (Ta) 12W (Ta) Surface Mount 8-VSON-CLIP (5x6)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:40A (Ta)
Email:[email protected]

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