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TPN14006NH,L1Q
- Part Number:
- TPN14006NH,L1Q
- Manufacturer:
- Toshiba Semiconductor and Storage
- Description:
- MOSFET N CH 60V 13A 8TSON-ADV
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 61521 Pieces
- Delivery Time:
- 1-2 days
- Data sheet:
- TPN14006NH,L1Q.pdf
Introduction
Specifications
| Condition | New & Unused, Original Packing |
|---|---|
| Origin | Contact us |
| Vgs(th) (Max) @ Id: | 4V @ 200µA |
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | 8-TSON Advance (3.3x3.3) |
| Series: | U-MOSVIII-H |
| Rds On (Max) @ Id, Vgs: | 14 mOhm @ 6.5A, 10V |
| Power Dissipation (Max): | 700mW (Ta), 30W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | 8-PowerVDFN |
| Other Names: | TPN14006NH,L1Q(M TPN14006NHL1Q TPN14006NHL1QTR |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 6.5V, 10V |
| Drain to Source Voltage (Vdss): | 60V |
| Detailed Description: | N-Channel 60V 13A (Ta) 700mW (Ta), 30W (Tc) Surface Mount 8-TSON Advance (3.3x3.3) |
| Current - Continuous Drain (Id) @ 25°C: | 13A (Ta) |
| Email: | [email protected] |
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