TPN11006NL,LQ
TPN11006NL,LQ
Part Number:
TPN11006NL,LQ
Manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N-CH 60V 17A 8TSON
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
22319 Pieces
Delivery Time:
1-2 days
Data sheet:
TPN11006NL,LQ.pdf

Introduction

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Specifications

Condition New & Unused, Original Packing
Origin Contact us
Vgs(th) (Max) @ Id:2.5V @ 200µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-TSON Advance (3.3x3.3)
Series:U-MOSVIII-H
Rds On (Max) @ Id, Vgs:11.4 mOhm @ 8.5A, 10V
Power Dissipation (Max):700mW (Ta), 30W (Tc)
Packaging:Original-Reel®
Package / Case:8-PowerVDFN
Other Names:TPN11006NLLQDKR
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:2000pF @ 30V
Gate Charge (Qg) (Max) @ Vgs:23nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):60V
Detailed Description:N-Channel 60V 17A (Tc) 700mW (Ta), 30W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Email:[email protected]

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