SQM120P10_10M1LGE3
SQM120P10_10M1LGE3
Part Number:
SQM120P10_10M1LGE3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET P-CH 100V 120A TO263
Available Quantity:
44792 Pieces
Delivery Time:
1-2 days
Data sheet:
SQM120P10_10M1LGE3.pdf

Introduction

ACTIVE-COMPONENT is the stocking distributor for SQM120P10_10M1LGE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SQM120P10_10M1LGE3 by email, we will give you a best price according your plan.
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Specifications

Condition New & Unused, Original Packing
Origin Contact us
Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-263 (D²Pak)
Series:Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:10.1 mOhm @ 30A, 10V
Power Dissipation (Max):375W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:9000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:190nC @ 10V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):100V
Detailed Description:P-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Email:[email protected]

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