SIZ200DT-T1-GE3
Part Number:
SIZ200DT-T1-GE3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET N-CH DUAL 30V
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
33922 Pieces
Delivery Time:
1-2 days
Data sheet:
SIZ200DT-T1-GE3.pdf

Introduction

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Specifications

Condition New & Unused, Original Packing
Origin Contact us
Vgs(th) (Max) @ Id:2.4V @ 250µA
Supplier Device Package:8-PowerPair® (3.3x3.3)
Series:TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs:5.5 mOhm @ 10A, 10V, 5.8 mOhm @ 10A, 10V
Power - Max:4.3W (Ta), 33W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:8-PowerWDFN
Other Names:SIZ200DT-T1-GE3TR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1510pF @ 15V, 1600pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:28nC @ 10V, 30nC @ 10V
FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Detailed Description:Mosfet Array 2 N-Channel (Dual) 30V 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc) 4.3W (Ta), 33W (Tc) Surface Mount 8-PowerPair® (3.3x3.3)
Current - Continuous Drain (Id) @ 25°C:22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
Email:[email protected]

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