SIZ200DT-T1-GE3
Part Number:
SIZ200DT-T1-GE3
Výrobce:
Electro-Films (EFI) / Vishay
Popis:
MOSFET N-CH DUAL 30V
Stav volného vedení / RoHS:
Bez olova / V souladu RoHS
dostupné množství:
33922 Pieces
Čas doručení:
1-2 days
Datový list:
SIZ200DT-T1-GE3.pdf

Úvod

We can supply SIZ200DT-T1-GE3, use the request quote form to request SIZ200DT-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIZ200DT-T1-GE3.The price and lead time for SIZ200DT-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIZ200DT-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Specifikace

Stav New & Unused, Original Packing
Původ Contact us
Vgs (th) (max) 'Id:2.4V @ 250µA
Dodavatel zařízení Package:8-PowerPair® (3.3x3.3)
Série:TrenchFET® Gen IV
RDS On (Max) @ Id, Vgs:5.5 mOhm @ 10A, 10V, 5.8 mOhm @ 10A, 10V
Power - Max:4.3W (Ta), 33W (Tc)
Obal:Tape & Reel (TR)
Paket / krabice:8-PowerWDFN
Ostatní jména:SIZ200DT-T1-GE3TR
Provozní teplota:-55°C ~ 150°C (TJ)
Typ montáže:Surface Mount
Úroveň citlivosti na vlhkost (MSL):1 (Unlimited)
Stav volného vedení / RoHS:Lead free / RoHS Compliant
Vstupní kapacita (Ciss) (Max) @ Vds:1510pF @ 15V, 1600pF @ 15V
Nabíjení brány (Qg) (Max) @ Vgs:28nC @ 10V, 30nC @ 10V
Typ FET:2 N-Channel (Dual)
FET Feature:Standard
Drain na zdroj napětí (Vdss):30V
Detailní popis:Mosfet Array 2 N-Channel (Dual) 30V 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc) 4.3W (Ta), 33W (Tc) Surface Mount 8-PowerPair® (3.3x3.3)
Proud - kontinuální odtok (Id) @ 25 ° C:22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
Email:[email protected]

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