SCT2H12NYTB
SCT2H12NYTB
Part Number:
SCT2H12NYTB
Manufacturer:
LAPIS Semiconductor
Description:
1700V 1.2 OHM 4A SIC FET
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
47495 Pieces
Delivery Time:
1-2 days
Data sheet:
1.SCT2H12NYTB.pdf2.SCT2H12NYTB.pdf

Introduction

ACTIVE-COMPONENT is the stocking distributor for SCT2H12NYTB, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SCT2H12NYTB by email, we will give you a best price according your plan.
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Specifications

Condition New & Unused, Original Packing
Origin Contact us
Vgs(th) (Max) @ Id:4V @ 410µA
Vgs (Max):+22V, -6V
Technology:SiCFET (Silicon Carbide)
Supplier Device Package:TO-268
Series:-
Rds On (Max) @ Id, Vgs:1.5 Ohm @ 1.1A, 18V
Power Dissipation (Max):44W (Tc)
Packaging:Cut Tape (CT)
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Other Names:SCT2H12NYTBCT
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:184pF @ 800V
Gate Charge (Qg) (Max) @ Vgs:14nC @ 18V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):18V
Drain to Source Voltage (Vdss):1700V
Detailed Description:N-Channel 1700V 4A (Tc) 44W (Tc) Surface Mount TO-268
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Email:[email protected]

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