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SCT3120ALGC11
- Part Number:
- SCT3120ALGC11
- Manufacturer:
- LAPIS Semiconductor
- Description:
- MOSFET NCH 650V 21A TO247N
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 9590 Pieces
- Delivery Time:
- 1-2 days
- Data sheet:
- 1.SCT3120ALGC11.pdf2.SCT3120ALGC11.pdf
Introduction
Specifications
| Condition | New & Unused, Original Packing |
|---|---|
| Origin | Contact us |
| Vgs(th) (Max) @ Id: | 5.6V @ 3.33mA |
| Vgs (Max): | +22V, -4V |
| Technology: | SiCFET (Silicon Carbide) |
| Supplier Device Package: | TO-247N |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 156 mOhm @ 6.7A, 18V |
| Power Dissipation (Max): | 103W (Tc) |
| Packaging: | Tube |
| Package / Case: | TO-247-3 |
| Operating Temperature: | 175°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 460pF @ 500V |
| Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 18V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 18V |
| Drain to Source Voltage (Vdss): | 650V |
| Detailed Description: | N-Channel 650V 21A (Tc) 103W (Tc) Through Hole TO-247N |
| Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
| Email: | [email protected] |
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