IPB12CNE8N G
IPB12CNE8N G
Part Number:
IPB12CNE8N G
Manufacturer:
International Rectifier (Infineon Technologies)
Description:
MOSFET N-CH 85V 67A TO263-3
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
28629 Pieces
Delivery Time:
1-2 days
Data sheet:
IPB12CNE8N G.pdf

Introduction

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Specifications

Condition New & Unused, Original Packing
Origin Contact us
Vgs(th) (Max) @ Id:4V @ 83µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D²PAK (TO-263AB)
Series:OptiMOS™
Rds On (Max) @ Id, Vgs:12.9 mOhm @ 67A, 10V
Power Dissipation (Max):125W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names:IPB12CNE8N G-ND
IPB12CNE8NG
SP000096451
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:4340pF @ 40V
Gate Charge (Qg) (Max) @ Vgs:64nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):85V
Detailed Description:N-Channel 85V 67A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C:67A (Tc)
Email:[email protected]

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