IPB12CNE8N G
IPB12CNE8N G
Nomor bagian:
IPB12CNE8N G
Pabrikan:
International Rectifier (Infineon Technologies)
Deskripsi:
MOSFET N-CH 85V 67A TO263-3
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
28629 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
IPB12CNE8N G.pdf

pengantar

We can supply IPB12CNE8N G, use the request quote form to request IPB12CNE8N G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IPB12CNE8N G.The price and lead time for IPB12CNE8N G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IPB12CNE8N G.We look forward to working with you to establish long-term relations of cooperation

Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Vgs (th) (Max) @ Id:4V @ 83µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:D²PAK (TO-263AB)
Seri:OptiMOS™
Rds Pada (Max) @ Id, Vgs:12.9 mOhm @ 67A, 10V
Power Disipasi (Max):125W (Tc)
Pengemasan:Tape & Reel (TR)
Paket / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Nama lain:IPB12CNE8N G-ND
IPB12CNE8NG
SP000096451
Suhu Operasional:-55°C ~ 175°C (TJ)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:4340pF @ 40V
Gate Charge (Qg) (Max) @ Vgs:64nC @ 10V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):10V
Tiriskan untuk Sumber Tegangan (Vdss):85V
Detil Deskripsi:N-Channel 85V 67A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25 ° C:67A (Tc)
Email:[email protected]

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