FQB4N20TM
FQB4N20TM
Part Number:
FQB4N20TM
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET N-CH 200V 3.6A D2PAK
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
60687 Pieces
Delivery Time:
1-2 days
Data sheet:
FQB4N20TM.pdf

Introduction

ACTIVE-COMPONENT is the stocking distributor for FQB4N20TM, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for FQB4N20TM by email, we will give you a best price according your plan.
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Specifications

Condition New & Unused, Original Packing
Origin Contact us
Vgs(th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D²PAK (TO-263AB)
Series:QFET®
Rds On (Max) @ Id, Vgs:1.4 Ohm @ 1.8A, 10V
Power Dissipation (Max):3.13W (Ta), 45W (Tc)
Packaging:Cut Tape (CT)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names:FQB4N20TMCT
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:220pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:6.5nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):200V
Detailed Description:N-Channel 200V 3.6A (Tc) 3.13W (Ta), 45W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C:3.6A (Tc)
Email:[email protected]

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