FQB4N20LTM
FQB4N20LTM
Part Number:
FQB4N20LTM
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET N-CH 200V 3.8A D2PAK
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
55905 Pieces
Delivery Time:
1-2 days
Data sheet:
FQB4N20LTM.pdf

Introduction

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Specifications

Condition New & Unused, Original Packing
Origin Contact us
Vgs(th) (Max) @ Id:2V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D²PAK (TO-263AB)
Series:QFET®
Rds On (Max) @ Id, Vgs:1.35 Ohm @ 1.9A, 10V
Power Dissipation (Max):3.13W (Ta), 45W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:310pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:5.2nC @ 5V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Drain to Source Voltage (Vdss):200V
Detailed Description:N-Channel 200V 3.8A (Tc) 3.13W (Ta), 45W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C:3.8A (Tc)
Email:[email protected]

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