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1N8026-GA
- Part Number:
- 1N8026-GA
- Manufacturer:
- GeneSiC Semiconductor
- Description:
- DIODE SILICON 1.2KV 8A TO257
- Lead Free Status / RoHS Status:
- Contains lead / RoHS non-compliant
- Available Quantity:
- 36708 Pieces
- Delivery Time:
- 1-2 days
- Data sheet:
- 1N8026-GA.pdf
Introduction
Specifications
| Condition | New & Unused, Original Packing |
|---|---|
| Origin | Contact us |
| Voltage - Forward (Vf) (Max) @ If: | 1.6V @ 2.5A |
| Voltage - DC Reverse (Vr) (Max): | 1200V |
| Supplier Device Package: | TO-257 |
| Speed: | No Recovery Time > 500mA (Io) |
| Series: | - |
| Reverse Recovery Time (trr): | 0ns |
| Packaging: | Tube |
| Package / Case: | TO-257-3 |
| Other Names: | 1242-1113 1N8026GA |
| Operating Temperature - Junction: | -55°C ~ 250°C |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 18 Weeks |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| Diode Type: | Silicon Carbide Schottky |
| Detailed Description: | Diode Silicon Carbide Schottky 1200V 8A (DC) Through Hole TO-257 |
| Current - Reverse Leakage @ Vr: | 10µA @ 1200V |
| Current - Average Rectified (Io): | 8A (DC) |
| Capacitance @ Vr, F: | 237pF @ 1V, 1MHz |
| Base Part Number: | 1N8026 |
| Email: | [email protected] |
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