Tilstand | New & Unused, Original Packing |
---|---|
Oprindelse | Contact us |
Spænding - Videresend (Vf) (Max) @ Hvis: | 1.6V @ 2.5A |
Spænding - DC-omvendt (Vr) (Max): | 1200V |
Leverandør Device Package: | TO-257 |
Fart: | No Recovery Time > 500mA (Io) |
Serie: | - |
Reverse Recovery Time (trr): | 0ns |
Emballage: | Tube |
Pakke / tilfælde: | TO-257-3 |
Andre navne: | 1242-1113 1N8026GA |
Driftstemperatur - Junction: | -55°C ~ 250°C |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 18 Weeks |
Blyfri Status / RoHS Status: | Contains lead / RoHS non-compliant |
Diodetype: | Silicon Carbide Schottky |
Detaljeret beskrivelse: | Diode Silicon Carbide Schottky 1200V 8A (DC) Through Hole TO-257 |
Nuværende - Reverse Lækage @ Vr: | 10µA @ 1200V |
Nuværende - Gennemsnitlig Rectified (Io): | 8A (DC) |
Kapacitans @ Vr, F: | 237pF @ 1V, 1MHz |
Basenummer: | 1N8026 |
Email: | [email protected] |