SI3460DV-T1-GE3
SI3460DV-T1-GE3
型號:
SI3460DV-T1-GE3
製造商:
Electro-Films (EFI) / Vishay
描述:
MOSFET N-CH 20V 5.1A 6TSOP
無鉛狀態/ RoHS狀態:
無鉛/符合RoHS
庫存數量:
34783 Pieces
發貨時間:
1-2 days
數據表:
SI3460DV-T1-GE3.pdf

簡單介紹

We can supply SI3460DV-T1-GE3, use the request quote form to request SI3460DV-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI3460DV-T1-GE3.The price and lead time for SI3460DV-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI3460DV-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

產品特性

狀況 New & Unused, Original Packing
來源 Contact us
VGS(TH)(最大)@標識:450mV @ 1mA (Min)
Vgs(最大):±8V
技術:MOSFET (Metal Oxide)
供應商設備封裝:6-TSOP
系列:TrenchFET®
RDS(ON)(最大值)@標識,柵極電壓:27 mOhm @ 5.1A, 4.5V
功率耗散(最大):1.1W (Ta)
封装:Tape & Reel (TR)
封裝/箱體:SOT-23-6 Thin, TSOT-23-6
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Surface Mount
濕度敏感度等級(MSL):1 (Unlimited)
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
柵極電荷(Qg)(Max)@ Vgs:20nC @ 4.5V
FET型:N-Channel
FET特點:-
驅動電壓(最大Rds開,最小Rds開):1.8V, 4.5V
漏極至源極電壓(Vdss):20V
詳細說明:N-Channel 20V 5.1A (Ta) 1.1W (Ta) Surface Mount 6-TSOP
電流 - 25°C連續排水(Id):5.1A (Ta)
Email:[email protected]

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