SI3460BDV-T1-E3
SI3460BDV-T1-E3
型號:
SI3460BDV-T1-E3
製造商:
Electro-Films (EFI) / Vishay
描述:
MOSFET N-CH 20V 8A 6-TSOP
無鉛狀態/ RoHS狀態:
無鉛/符合RoHS
庫存數量:
76856 Pieces
發貨時間:
1-2 days
數據表:
SI3460BDV-T1-E3.pdf

簡單介紹

We can supply SI3460BDV-T1-E3, use the request quote form to request SI3460BDV-T1-E3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI3460BDV-T1-E3.The price and lead time for SI3460BDV-T1-E3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI3460BDV-T1-E3.We look forward to working with you to establish long-term relations of cooperation

產品特性

狀況 New & Unused, Original Packing
來源 Contact us
VGS(TH)(最大)@標識:1V @ 250µA
Vgs(最大):±8V
技術:MOSFET (Metal Oxide)
供應商設備封裝:6-TSOP
系列:TrenchFET®
RDS(ON)(最大值)@標識,柵極電壓:27 mOhm @ 5.1A, 4.5V
功率耗散(最大):2W (Ta), 3.5W (Tc)
封装:Original-Reel®
封裝/箱體:SOT-23-6 Thin, TSOT-23-6
其他名稱:SI3460BDV-T1-E3DKR
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Surface Mount
濕度敏感度等級(MSL):1 (Unlimited)
製造商標準交貨期:33 Weeks
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:860pF @ 10V
柵極電荷(Qg)(Max)@ Vgs:24nC @ 8V
FET型:N-Channel
FET特點:-
驅動電壓(最大Rds開,最小Rds開):1.8V, 4.5V
漏極至源極電壓(Vdss):20V
詳細說明:N-Channel 20V 8A (Tc) 2W (Ta), 3.5W (Tc) Surface Mount 6-TSOP
電流 - 25°C連續排水(Id):8A (Tc)
Email:[email protected]

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