SIDR668DP-T1-GE3
SIDR668DP-T1-GE3
Artikelnummer:
SIDR668DP-T1-GE3
Tillverkare:
Electro-Films (EFI) / Vishay
Beskrivning:
MOSFET N-CH 100V
Ledningsfri status / RoHS-status:
Blyfri / Överensstämmer med RoHS
tillgänglig kvantitet:
71747 Pieces
Leveranstid:
1-2 days
Datablad:
SIDR668DP-T1-GE3.pdf

Introduktion

We can supply SIDR668DP-T1-GE3, use the request quote form to request SIDR668DP-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIDR668DP-T1-GE3.The price and lead time for SIDR668DP-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIDR668DP-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Tillstånd New & Unused, Original Packing
Ursprung Contact us
Vgs (th) (Max) @ Id:3.4V @ 250µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:PowerPAK® SO-8DC
Serier:TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs:4.8 mOhm @ 20A, 10V
Effektdissipation (Max):6.25W (Ta), 125W (Tc)
Förpackning:Tape & Reel (TR)
Förpackning / Fodral:PowerPAK® SO-8
Andra namn:SIDR668DP-T1-GE3TR
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstyp:Surface Mount
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Tillverkarens normala ledtid:32 Weeks
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:5400pF @ 50V
Gate Laddning (Qg) (Max) @ Vgs:108nC @ 10V
FET-typ:N-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):7.5V, 10V
Avlopp till källspänning (Vdss):100V
detaljerad beskrivning:N-Channel 100V 23.2A (Ta), 95A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:23.2A (Ta), 95A (Tc)
Email:[email protected]

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