SIDR668DP-T1-GE3
SIDR668DP-T1-GE3
Delenummer:
SIDR668DP-T1-GE3
Produsent:
Electro-Films (EFI) / Vishay
Beskrivelse:
MOSFET N-CH 100V
Lead Free Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgjengelig mengde:
71747 Pieces
Leveringstid:
1-2 days
Dataark:
SIDR668DP-T1-GE3.pdf

Introduksjon

We can supply SIDR668DP-T1-GE3, use the request quote form to request SIDR668DP-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIDR668DP-T1-GE3.The price and lead time for SIDR668DP-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIDR668DP-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

spesifikasjoner

Tilstand New & Unused, Original Packing
Opprinnelse Contact us
Vgs (th) (Maks) @ Id:3.4V @ 250µA
Vgs (maks):±20V
Teknologi:MOSFET (Metal Oxide)
Leverandør Enhetspakke:PowerPAK® SO-8DC
Serie:TrenchFET® Gen IV
Rds På (Maks) @ Id, Vgs:4.8 mOhm @ 20A, 10V
Strømdissipasjon (maks):6.25W (Ta), 125W (Tc)
emballasje:Tape & Reel (TR)
Pakke / tilfelle:PowerPAK® SO-8
Andre navn:SIDR668DP-T1-GE3TR
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Vannfølsomhetsnivå (MSL):1 (Unlimited)
Produsentens Standard Lead Time:32 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Inputkapasitans (Ciss) (Maks) @ Vds:5400pF @ 50V
Gateavgift (Qg) (Maks) @ Vgs:108nC @ 10V
FET Type:N-Channel
FET-funksjonen:-
Drivspenning (Maks. Rds På, Min Rds På):7.5V, 10V
Drain til Source Voltage (VDSS):100V
Detaljert beskrivelse:N-Channel 100V 23.2A (Ta), 95A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC
Strøm - Kontinuerlig avløp (Id) @ 25 ° C:23.2A (Ta), 95A (Tc)
Email:[email protected]

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