SIDR668DP-T1-GE3
SIDR668DP-T1-GE3
Nomor bagian:
SIDR668DP-T1-GE3
Pabrikan:
Electro-Films (EFI) / Vishay
Deskripsi:
MOSFET N-CH 100V
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
71747 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
SIDR668DP-T1-GE3.pdf

pengantar

We can supply SIDR668DP-T1-GE3, use the request quote form to request SIDR668DP-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIDR668DP-T1-GE3.The price and lead time for SIDR668DP-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIDR668DP-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Vgs (th) (Max) @ Id:3.4V @ 250µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:PowerPAK® SO-8DC
Seri:TrenchFET® Gen IV
Rds Pada (Max) @ Id, Vgs:4.8 mOhm @ 20A, 10V
Power Disipasi (Max):6.25W (Ta), 125W (Tc)
Pengemasan:Tape & Reel (TR)
Paket / Case:PowerPAK® SO-8
Nama lain:SIDR668DP-T1-GE3TR
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:32 Weeks
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:5400pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:108nC @ 10V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):7.5V, 10V
Tiriskan untuk Sumber Tegangan (Vdss):100V
Detil Deskripsi:N-Channel 100V 23.2A (Ta), 95A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC
Current - Continuous Drain (Id) @ 25 ° C:23.2A (Ta), 95A (Tc)
Email:[email protected]

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