TPH2R306NH,L1Q
TPH2R306NH,L1Q
Onderdeel nummer:
TPH2R306NH,L1Q
Fabrikant:
Toshiba Semiconductor and Storage
Beschrijving:
MOSFET N CH 60V 60A SOP ADV
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
22105 Pieces
Aflevertijd:
1-2 days
Data papier:
TPH2R306NH,L1Q.pdf

Invoering

We can supply TPH2R306NH,L1Q, use the request quote form to request TPH2R306NH,L1Q pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TPH2R306NH,L1Q.The price and lead time for TPH2R306NH,L1Q depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TPH2R306NH,L1Q.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:4V @ 1mA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:8-SOP Advance (5x5)
Serie:U-MOSVIII-H
Rds On (Max) @ Id, VGS:2.3 mOhm @ 30A, 10V
Vermogensverlies (Max):1.6W (Ta), 78W (Tc)
Packaging:Cut Tape (CT)
Verpakking / doos:8-PowerVDFN
Andere namen:TPH2R306NHL1QCT
Temperatuur:150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:6100pF @ 30V
Gate Charge (Qg) (Max) @ Vgs:72nC @ 10V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):6.5V, 10V
Drain naar de Bron Voltage (Vdss):60V
gedetailleerde beschrijving:N-Channel 60V 60A (Tc) 1.6W (Ta), 78W (Tc) Surface Mount 8-SOP Advance (5x5)
Current - Continuous Drain (Id) @ 25 ° C:60A (Tc)
Email:[email protected]

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