TPH1R712MD,L1Q
TPH1R712MD,L1Q
Onderdeel nummer:
TPH1R712MD,L1Q
Fabrikant:
Toshiba Semiconductor and Storage
Beschrijving:
MOSFET P-CH 20V 60A 8SOP ADV
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
51978 Pieces
Aflevertijd:
1-2 days
Data papier:
TPH1R712MD,L1Q.pdf

Invoering

We can supply TPH1R712MD,L1Q, use the request quote form to request TPH1R712MD,L1Q pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TPH1R712MD,L1Q.The price and lead time for TPH1R712MD,L1Q depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TPH1R712MD,L1Q.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
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VGS (th) (Max) @ Id:1.2V @ 1mA
Vgs (Max):±12V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:8-SOP Advance (5x5)
Serie:U-MOSVI
Rds On (Max) @ Id, VGS:1.7 mOhm @ 30A, 4.5V
Vermogensverlies (Max):78W (Tc)
Packaging:Tape & Reel (TR)
Verpakking / doos:8-PowerVDFN
Andere namen:TPH1R712MD,L1Q(M
TPH1R712MDL1QTR
Temperatuur:150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:10900pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:182nC @ 5V
FET Type:P-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):2.5V, 4.5V
Drain naar de Bron Voltage (Vdss):20V
gedetailleerde beschrijving:P-Channel 20V 60A (Tc) 78W (Tc) Surface Mount 8-SOP Advance (5x5)
Current - Continuous Drain (Id) @ 25 ° C:60A (Tc)
Email:[email protected]

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