TPH2010FNH,L1Q
TPH2010FNH,L1Q
Onderdeel nummer:
TPH2010FNH,L1Q
Fabrikant:
Toshiba Semiconductor and Storage
Beschrijving:
MOSFET N-CH 250V 5.6A 8SOP
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
10477 Pieces
Aflevertijd:
1-2 days
Data papier:
TPH2010FNH,L1Q.pdf

Invoering

We can supply TPH2010FNH,L1Q, use the request quote form to request TPH2010FNH,L1Q pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TPH2010FNH,L1Q.The price and lead time for TPH2010FNH,L1Q depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TPH2010FNH,L1Q.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:4V @ 200µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:8-SOP Advance (5x5)
Serie:U-MOSVIII-H
Rds On (Max) @ Id, VGS:198 mOhm @ 2.8A, 10V
Vermogensverlies (Max):1.6W (Ta), 42W (Tc)
Packaging:Tape & Reel (TR)
Verpakking / doos:8-PowerVDFN
Andere namen:TPH2010FNH,L1Q(M
TPH2010FNHL1QTR
Temperatuur:150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:600pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:7nC @ 10V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):10V
Drain naar de Bron Voltage (Vdss):250V
gedetailleerde beschrijving:N-Channel 250V 5.6A (Ta) 1.6W (Ta), 42W (Tc) Surface Mount 8-SOP Advance (5x5)
Current - Continuous Drain (Id) @ 25 ° C:5.6A (Ta)
Email:[email protected]

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