STB12NM60N-1
STB12NM60N-1
Onderdeel nummer:
STB12NM60N-1
Fabrikant:
STMicroelectronics
Beschrijving:
MOSFET N-CH 600V 10A I2PAK
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
42771 Pieces
Aflevertijd:
1-2 days
Data papier:
STB12NM60N-1.pdf

Invoering

We can supply STB12NM60N-1, use the request quote form to request STB12NM60N-1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number STB12NM60N-1.The price and lead time for STB12NM60N-1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# STB12NM60N-1.We look forward to working with you to establish long-term relations of cooperation

bestek

Staat New & Unused, Original Packing
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VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±25V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:I2PAK
Serie:MDmesh™ II
Rds On (Max) @ Id, VGS:410 mOhm @ 5A, 10V
Vermogensverlies (Max):90W (Tc)
Packaging:Tube
Verpakking / doos:TO-262-3 Long Leads, I²Pak, TO-262AA
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Through Hole
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:960pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:30.5nC @ 10V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):10V
Drain naar de Bron Voltage (Vdss):600V
gedetailleerde beschrijving:N-Channel 600V 10A (Tc) 90W (Tc) Through Hole I2PAK
Current - Continuous Drain (Id) @ 25 ° C:10A (Tc)
Email:[email protected]

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