STB12NM60N-1
STB12NM60N-1
Varenummer:
STB12NM60N-1
Fabrikant:
STMicroelectronics
Beskrivelse:
MOSFET N-CH 600V 10A I2PAK
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
42771 Pieces
Leveringstid:
1-2 days
Datablad:
STB12NM60N-1.pdf

Introduktion

We can supply STB12NM60N-1, use the request quote form to request STB12NM60N-1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number STB12NM60N-1.The price and lead time for STB12NM60N-1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# STB12NM60N-1.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±25V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:I2PAK
Serie:MDmesh™ II
Rds On (Max) @ Id, Vgs:410 mOhm @ 5A, 10V
Power Dissipation (Max):90W (Tc)
Emballage:Tube
Pakke / tilfælde:TO-262-3 Long Leads, I²Pak, TO-262AA
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Through Hole
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:960pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:30.5nC @ 10V
FET Type:N-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):10V
Afløb til Source Voltage (VDSS):600V
Detaljeret beskrivelse:N-Channel 600V 10A (Tc) 90W (Tc) Through Hole I2PAK
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:10A (Tc)
Email:[email protected]

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