STB12NM60N-1
STB12NM60N-1
Nomor bagian:
STB12NM60N-1
Pabrikan:
STMicroelectronics
Deskripsi:
MOSFET N-CH 600V 10A I2PAK
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
42771 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
STB12NM60N-1.pdf

pengantar

We can supply STB12NM60N-1, use the request quote form to request STB12NM60N-1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number STB12NM60N-1.The price and lead time for STB12NM60N-1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# STB12NM60N-1.We look forward to working with you to establish long-term relations of cooperation

Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±25V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:I2PAK
Seri:MDmesh™ II
Rds Pada (Max) @ Id, Vgs:410 mOhm @ 5A, 10V
Power Disipasi (Max):90W (Tc)
Pengemasan:Tube
Paket / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:960pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:30.5nC @ 10V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):10V
Tiriskan untuk Sumber Tegangan (Vdss):600V
Detil Deskripsi:N-Channel 600V 10A (Tc) 90W (Tc) Through Hole I2PAK
Current - Continuous Drain (Id) @ 25 ° C:10A (Tc)
Email:[email protected]

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