SI3590DV-T1-GE3
SI3590DV-T1-GE3
Onderdeel nummer:
SI3590DV-T1-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beschrijving:
MOSFET N/P-CH 30V 2.5A 6-TSOP
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
10364 Pieces
Aflevertijd:
1-2 days
Data papier:
SI3590DV-T1-GE3.pdf

Invoering

We can supply SI3590DV-T1-GE3, use the request quote form to request SI3590DV-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI3590DV-T1-GE3.The price and lead time for SI3590DV-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI3590DV-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
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VGS (th) (Max) @ Id:1.5V @ 250µA
Leverancier Device Pakket:6-TSOP
Serie:TrenchFET®
Rds On (Max) @ Id, VGS:77 mOhm @ 3A, 4.5V
Vermogen - Max:830mW
Packaging:Cut Tape (CT)
Verpakking / doos:SOT-23-6 Thin, TSOT-23-6
Andere namen:SI3590DV-T1-GE3CT
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Fabrikant Standaard Levertijd:33 Weeks
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:-
Gate Charge (Qg) (Max) @ Vgs:4.5nC @ 4.5V
FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain naar de Bron Voltage (Vdss):30V
gedetailleerde beschrijving:Mosfet Array N and P-Channel 30V 2.5A, 1.7A 830mW Surface Mount 6-TSOP
Current - Continuous Drain (Id) @ 25 ° C:2.5A, 1.7A
Email:[email protected]

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