SI3475DV-T1-E3
SI3475DV-T1-E3
Onderdeel nummer:
SI3475DV-T1-E3
Fabrikant:
Electro-Films (EFI) / Vishay
Beschrijving:
MOSFET P-CH 200V 0.95A 6-TSOP
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
13135 Pieces
Aflevertijd:
1-2 days
Data papier:
SI3475DV-T1-E3.pdf

Invoering

We can supply SI3475DV-T1-E3, use the request quote form to request SI3475DV-T1-E3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI3475DV-T1-E3.The price and lead time for SI3475DV-T1-E3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI3475DV-T1-E3.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:6-TSOP
Serie:TrenchFET®
Rds On (Max) @ Id, VGS:1.61 Ohm @ 900mA, 10V
Vermogensverlies (Max):2W (Ta), 3.2W (Tc)
Packaging:Tape & Reel (TR)
Verpakking / doos:SOT-23-6 Thin, TSOT-23-6
Andere namen:SI3475DV-T1-E3TR
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:500pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:18nC @ 10V
FET Type:P-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):6V, 10V
Drain naar de Bron Voltage (Vdss):200V
gedetailleerde beschrijving:P-Channel 200V 950mA (Tc) 2W (Ta), 3.2W (Tc) Surface Mount 6-TSOP
Current - Continuous Drain (Id) @ 25 ° C:950mA (Tc)
Email:[email protected]

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