SI3475DV-T1-E3
SI3475DV-T1-E3
型號:
SI3475DV-T1-E3
製造商:
Electro-Films (EFI) / Vishay
描述:
MOSFET P-CH 200V 0.95A 6-TSOP
無鉛狀態/ RoHS狀態:
無鉛/符合RoHS
庫存數量:
13135 Pieces
發貨時間:
1-2 days
數據表:
SI3475DV-T1-E3.pdf

簡單介紹

We can supply SI3475DV-T1-E3, use the request quote form to request SI3475DV-T1-E3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI3475DV-T1-E3.The price and lead time for SI3475DV-T1-E3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI3475DV-T1-E3.We look forward to working with you to establish long-term relations of cooperation

產品特性

狀況 New & Unused, Original Packing
來源 Contact us
VGS(TH)(最大)@標識:4V @ 250µA
Vgs(最大):±20V
技術:MOSFET (Metal Oxide)
供應商設備封裝:6-TSOP
系列:TrenchFET®
RDS(ON)(最大值)@標識,柵極電壓:1.61 Ohm @ 900mA, 10V
功率耗散(最大):2W (Ta), 3.2W (Tc)
封装:Tape & Reel (TR)
封裝/箱體:SOT-23-6 Thin, TSOT-23-6
其他名稱:SI3475DV-T1-E3TR
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Surface Mount
濕度敏感度等級(MSL):1 (Unlimited)
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:500pF @ 50V
柵極電荷(Qg)(Max)@ Vgs:18nC @ 10V
FET型:P-Channel
FET特點:-
驅動電壓(最大Rds開,最小Rds開):6V, 10V
漏極至源極電壓(Vdss):200V
詳細說明:P-Channel 200V 950mA (Tc) 2W (Ta), 3.2W (Tc) Surface Mount 6-TSOP
電流 - 25°C連續排水(Id):950mA (Tc)
Email:[email protected]

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