SI3475DV-T1-E3
SI3475DV-T1-E3
Delenummer:
SI3475DV-T1-E3
Produsent:
Electro-Films (EFI) / Vishay
Beskrivelse:
MOSFET P-CH 200V 0.95A 6-TSOP
Lead Free Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgjengelig mengde:
13135 Pieces
Leveringstid:
1-2 days
Dataark:
SI3475DV-T1-E3.pdf

Introduksjon

We can supply SI3475DV-T1-E3, use the request quote form to request SI3475DV-T1-E3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI3475DV-T1-E3.The price and lead time for SI3475DV-T1-E3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI3475DV-T1-E3.We look forward to working with you to establish long-term relations of cooperation

spesifikasjoner

Tilstand New & Unused, Original Packing
Opprinnelse Contact us
Vgs (th) (Maks) @ Id:4V @ 250µA
Vgs (maks):±20V
Teknologi:MOSFET (Metal Oxide)
Leverandør Enhetspakke:6-TSOP
Serie:TrenchFET®
Rds På (Maks) @ Id, Vgs:1.61 Ohm @ 900mA, 10V
Strømdissipasjon (maks):2W (Ta), 3.2W (Tc)
emballasje:Tape & Reel (TR)
Pakke / tilfelle:SOT-23-6 Thin, TSOT-23-6
Andre navn:SI3475DV-T1-E3TR
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Vannfølsomhetsnivå (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Inputkapasitans (Ciss) (Maks) @ Vds:500pF @ 50V
Gateavgift (Qg) (Maks) @ Vgs:18nC @ 10V
FET Type:P-Channel
FET-funksjonen:-
Drivspenning (Maks. Rds På, Min Rds På):6V, 10V
Drain til Source Voltage (VDSS):200V
Detaljert beskrivelse:P-Channel 200V 950mA (Tc) 2W (Ta), 3.2W (Tc) Surface Mount 6-TSOP
Strøm - Kontinuerlig avløp (Id) @ 25 ° C:950mA (Tc)
Email:[email protected]

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