IPD65R650CEATMA1
IPD65R650CEATMA1
Onderdeel nummer:
IPD65R650CEATMA1
Fabrikant:
International Rectifier (Infineon Technologies)
Beschrijving:
MOSFET N-CH 650V 10.1A TO252
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
73968 Pieces
Aflevertijd:
1-2 days
Data papier:
IPD65R650CEATMA1.pdf

Invoering

We can supply IPD65R650CEATMA1, use the request quote form to request IPD65R650CEATMA1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IPD65R650CEATMA1.The price and lead time for IPD65R650CEATMA1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IPD65R650CEATMA1.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
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VGS (th) (Max) @ Id:3.5V @ 0.21mA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:PG-TO252-3
Serie:CoolMOS™
Rds On (Max) @ Id, VGS:650 mOhm @ 2.1A, 10V
Vermogensverlies (Max):86W (Tc)
Packaging:Tape & Reel (TR)
Verpakking / doos:TO-252-3, DPak (2 Leads + Tab), SC-63
Andere namen:SP001295798
Temperatuur:-40°C ~ 150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:440pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:23nC @ 10V
FET Type:N-Channel
FET Feature:Super Junction
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):10V
Drain naar de Bron Voltage (Vdss):650V
gedetailleerde beschrijving:N-Channel 650V 10.1A (Tc) 86W (Tc) Surface Mount PG-TO252-3
Current - Continuous Drain (Id) @ 25 ° C:10.1A (Tc)
Email:[email protected]

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