IPD65R660CFDAATMA1
IPD65R660CFDAATMA1
Onderdeel nummer:
IPD65R660CFDAATMA1
Fabrikant:
International Rectifier (Infineon Technologies)
Beschrijving:
MOSFET N-CH TO252-3
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
46063 Pieces
Aflevertijd:
1-2 days
Data papier:
IPD65R660CFDAATMA1.pdf

Invoering

We can supply IPD65R660CFDAATMA1, use the request quote form to request IPD65R660CFDAATMA1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IPD65R660CFDAATMA1.The price and lead time for IPD65R660CFDAATMA1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IPD65R660CFDAATMA1.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:4.5V @ 214.55µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:PG-TO252-3
Serie:Automotive, AEC-Q101, CoolMOS™
Rds On (Max) @ Id, VGS:660 mOhm @ 3.22A, 10V
Vermogensverlies (Max):62.5W (Tc)
Packaging:Tape & Reel (TR)
Verpakking / doos:TO-252-3, DPak (2 Leads + Tab), SC-63
Andere namen:SP000928260
Temperatuur:-40°C ~ 150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:543pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:20nC @ 10V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):10V
Drain naar de Bron Voltage (Vdss):650V
gedetailleerde beschrijving:N-Channel 650V 6A (Tc) 62.5W (Tc) Surface Mount PG-TO252-3
Current - Continuous Drain (Id) @ 25 ° C:6A (Tc)
Email:[email protected]

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