FQI7N10LTU
FQI7N10LTU
Onderdeel nummer:
FQI7N10LTU
Fabrikant:
AMI Semiconductor / ON Semiconductor
Beschrijving:
MOSFET N-CH 100V 7.3A I2PAK
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
13026 Pieces
Aflevertijd:
1-2 days
Data papier:
FQI7N10LTU.pdf

Invoering

We can supply FQI7N10LTU, use the request quote form to request FQI7N10LTU pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FQI7N10LTU.The price and lead time for FQI7N10LTU depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FQI7N10LTU.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
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VGS (th) (Max) @ Id:2V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:I2PAK (TO-262)
Serie:QFET®
Rds On (Max) @ Id, VGS:350 mOhm @ 3.65A, 10V
Vermogensverlies (Max):3.75W (Ta), 40W (Tc)
Packaging:Tube
Verpakking / doos:TO-262-3 Long Leads, I²Pak, TO-262AA
Temperatuur:-55°C ~ 175°C (TJ)
montage Type:Through Hole
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:290pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:6nC @ 5V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):5V, 10V
Drain naar de Bron Voltage (Vdss):100V
gedetailleerde beschrijving:N-Channel 100V 7.3A (Tc) 3.75W (Ta), 40W (Tc) Through Hole I2PAK (TO-262)
Current - Continuous Drain (Id) @ 25 ° C:7.3A (Tc)
Email:[email protected]

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