FQI7N10LTU
FQI7N10LTU
Varenummer:
FQI7N10LTU
Fabrikant:
AMI Semiconductor / ON Semiconductor
Beskrivelse:
MOSFET N-CH 100V 7.3A I2PAK
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
13026 Pieces
Leveringstid:
1-2 days
Datablad:
FQI7N10LTU.pdf

Introduktion

We can supply FQI7N10LTU, use the request quote form to request FQI7N10LTU pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FQI7N10LTU.The price and lead time for FQI7N10LTU depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FQI7N10LTU.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:2V @ 250µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:I2PAK (TO-262)
Serie:QFET®
Rds On (Max) @ Id, Vgs:350 mOhm @ 3.65A, 10V
Power Dissipation (Max):3.75W (Ta), 40W (Tc)
Emballage:Tube
Pakke / tilfælde:TO-262-3 Long Leads, I²Pak, TO-262AA
Driftstemperatur:-55°C ~ 175°C (TJ)
Monteringstype:Through Hole
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:290pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:6nC @ 5V
FET Type:N-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):5V, 10V
Afløb til Source Voltage (VDSS):100V
Detaljeret beskrivelse:N-Channel 100V 7.3A (Tc) 3.75W (Ta), 40W (Tc) Through Hole I2PAK (TO-262)
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:7.3A (Tc)
Email:[email protected]

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