Staat | New & Unused, Original Packing |
---|---|
Oorsprong | Contact us |
VGS (th) (Max) @ Id: | 2.5V @ 7mA |
Vgs (Max): | +6V, -4V |
Technologie: | GaNFET (Gallium Nitride) |
Leverancier Device Pakket: | Die |
Serie: | eGaN® |
Rds On (Max) @ Id, VGS: | 10 mOhm @ 20A, 5V |
Vermogensverlies (Max): | - |
Packaging: | Tape & Reel (TR) |
Verpakking / doos: | Die |
Andere namen: | 917-1142-2 917-1142-2-ND 917-EPC2034ENGRTR |
Temperatuur: | -40°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 940pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs: | 8.5nC @ 5V |
FET Type: | N-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 5V |
Drain naar de Bron Voltage (Vdss): | 200V |
gedetailleerde beschrijving: | N-Channel 200V 31A (Ta) Surface Mount Die |
Current - Continuous Drain (Id) @ 25 ° C: | 31A (Ta) |
Email: | [email protected] |