Kondisi | New & Unused, Original Packing |
---|---|
Asal | Contact us |
Vgs (th) (Max) @ Id: | 2.5V @ 7mA |
Vgs (Max): | +6V, -4V |
Teknologi: | GaNFET (Gallium Nitride) |
Paket Perangkat pemasok: | Die |
Seri: | eGaN® |
Rds Pada (Max) @ Id, Vgs: | 10 mOhm @ 20A, 5V |
Power Disipasi (Max): | - |
Pengemasan: | Tape & Reel (TR) |
Paket / Case: | Die |
Nama lain: | 917-1142-2 917-1142-2-ND 917-EPC2034ENGRTR |
Suhu Operasional: | -40°C ~ 150°C (TJ) |
mount Jenis: | Surface Mount |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 940pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs: | 8.5nC @ 5V |
FET Jenis: | N-Channel |
Fitur FET: | - |
Drive Voltage (Max Rds On, Min RDS Aktif): | 5V |
Tiriskan untuk Sumber Tegangan (Vdss): | 200V |
Detil Deskripsi: | N-Channel 200V 31A (Ta) Surface Mount Die |
Current - Continuous Drain (Id) @ 25 ° C: | 31A (Ta) |
Email: | [email protected] |