SSM6N37FE,LM(T
SSM6N37FE,LM(T
Modello di prodotti:
SSM6N37FE,LM(T
fabbricante:
Toshiba Semiconductor and Storage
Descrizione:
MOSFET 2N-CH 20V 0.25A 2-2N1D
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
50940 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
SSM6N37FE,LM(T.pdf

introduzione

We can supply SSM6N37FE,LM(T, use the request quote form to request SSM6N37FE,LM(T pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SSM6N37FE,LM(T.The price and lead time for SSM6N37FE,LM(T depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SSM6N37FE,LM(T.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Vgs (th) (max) a Id:1V @ 1mA
Contenitore dispositivo fornitore:ES6
Serie:-
Rds On (max) a Id, Vgs:2.2 Ohm @ 100mA, 4.5V
Potenza - Max:150mW
imballaggio:Tape & Reel (TR)
Contenitore / involucro:SOT-563, SOT-666
Altri nomi:SSM6N37FE,LM
SSM6N37FE,LM(B
SSM6N37FELM
SSM6N37FELM(TTR
SSM6N37FELMTR
SSM6N37FELMTR-ND
temperatura di esercizio:150°C (TJ)
Tipo montaggio:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:12pF @ 10V
Carica Gate (Qg) (Max) @ Vgs:-
Tipo FET:2 N-Channel (Dual)
Caratteristica FET:Logic Level Gate
Tensione drain-source (Vdss):20V
Descrizione dettagliata:Mosfet Array 2 N-Channel (Dual) 20V 250mA 150mW Surface Mount ES6
Corrente - Drain continuo (Id) @ 25 ° C:250mA
Email:[email protected]

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