SSM6N35AFE,LF
SSM6N35AFE,LF
Modello di prodotti:
SSM6N35AFE,LF
fabbricante:
Toshiba Semiconductor and Storage
Descrizione:
MOSFET 2 N-CHANNEL 20V 250MA ES6
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
59855 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
SSM6N35AFE,LF.pdf

introduzione

We can supply SSM6N35AFE,LF, use the request quote form to request SSM6N35AFE,LF pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SSM6N35AFE,LF.The price and lead time for SSM6N35AFE,LF depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SSM6N35AFE,LF.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Vgs (th) (max) a Id:1V @ 100µA
Contenitore dispositivo fornitore:ES6
Serie:-
Rds On (max) a Id, Vgs:1.1 Ohm @ 150mA, 4.5V
Potenza - Max:250mW
imballaggio:Tape & Reel (TR)
Contenitore / involucro:SOT-563, SOT-666
Altri nomi:SSM6N35AFE,LF(B
SSM6N35AFELF
SSM6N35AFELF(B
SSM6N35AFELF-ND
SSM6N35AFELFTR
temperatura di esercizio:150°C
Tipo montaggio:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:36pF @ 10V
Carica Gate (Qg) (Max) @ Vgs:0.34nC @ 4.5V
Tipo FET:2 N-Channel (Dual)
Caratteristica FET:Logic Level Gate, 1.2V Drive
Tensione drain-source (Vdss):20V
Descrizione dettagliata:Mosfet Array 2 N-Channel (Dual) 20V 250mA (Ta) 250mW Surface Mount ES6
Corrente - Drain continuo (Id) @ 25 ° C:250mA (Ta)
Email:[email protected]

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